M29F200T Overview
The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. AI01986 1/33 M29F200T, M29F200B Figure 2A. TSOP Pin Connections AI01988 Warning: NC = Not Connected. Warning: NC = Not Connected. Figure 2C. SO Pin Connections Table 1. Signal Names
